1/5 preliminary data january, 28 2002 db-960-70w rf power amplifier using 2 x pd57045s the ldmosst family n-channel enhancement-mode lateral mosfets ? excellent thermal stability ? common source configuration ? p out = 70 w min. with 13 db gain over 925-960 mhz ? 10:1 load vswr capability ? beo free amplifier. description the db-960-70w is a common source n-channel enhancement-mode lateral field-effect rf power amplifier designed for gsm & e-gsm base station applications. the db-960-70w is designed in cooperation with europenne de tlcommunications s.a (www.etsa.fr), for high gain and broadband performance operating in common source mode at 26 v, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dbc. order code db-960-70w absolute maximum ratings (t case =25 o c) symbol parameter value unit v dd supply voltage 32 v i d drain current 9 a p diss power dissipation 135 w t case operating case temperature -20 to +85 o c p amb max. ambient temperature +55 o c mechanical specification l=80 mm w=50 mm h=10 mm
db-960-70w 2/5 symbol test conditio ns min. typ. max. unit freq. frequency range 925 960 mhz gain p out =75w 12.5 13 db p 1db over frequency range: 925 - 960 mhz 70 75 w flatness over frequency range and @ p out =75w +/- 0.5 db flatness p out from 0.1w to 75w 1db nd at p 1db p 1db 45 50 % irtl input return loss p out from 0.1w to 75w -20 -15 db harmonic p out =75w -40 -30 dbc vswr load mismatch all phases @ p out =75w 10:1 spurious 10:1 vswr all phases and p out from 0.1 to 75w -76 dbc imd 3 p out = 75 wpep -25 dbc electrical specification (t amb = +25 o c, vdd = 26v, idq = 2 x 200ma) typical performance output power versus input power power gain versus frequency (pout = 75w) p1db and efficiency versus frequency 02 46 8 pin (w) 0 20 40 60 80 100 120 pout (w) vdd = 26 v idq= 2 x 200ma 940mhz 960mhz 920mhz 910 920 930 940 950 960 970 f (mhz) 10 11 12 13 14 15 gp (db) vd d = 2 6 v idq= 2 x 200ma 910 920 930 940 950 960 970 f (mhz) 20 40 60 80 100 120 p1d b (w) 30 40 50 60 70 80 nd (%) vdd= 26v idq= 2 x 200ma p1db eff.
3/5 db-960-70w cv1 cv2 ref. etsa c07/2000 - ed1 test fixture component layout test circuit photomaster ref. etsa c07/2000 - ed1
db-960-70w 4/5 test circuit component part list component description t1, t2 pd57045s transistor c1, c2, c23, c24 47pf - 500v ceramic chip capacitor c3, c4 2.2pf - 500v ceramic chip capacitor c5, c6, c17, c18 100pf - 500v ceramic chip capacitor c7, c8, c9, c10, c11, c12, c13, c14 10pf - 500v ceramic chip capacitor c15, c16 100nf - 63v ceramic chip capacitor c19, c20 1 m f / 35v electrolytic capacitor c21, c22 4.7pf - 500v ceramic chip capacitor c26, c27 3.3pf - 500v ceramic chip capacitor c25 0.5pf - 500v ceramic chip capacitor cv1, cv2 adjustable capacitor 0.6 - 4.5pf / 500v p1, p2 10k ohms multiturn potentiometer r1,r7 100 ohms 1/4w 1206 smd chip resistor r2 50 ohms 30w - 4ghz load r3, r4 4.7k ohms 1/4w 1206 smd chip resistor r5, r6 10k ohms 1/4w 1206 smd chip resistor d1, d2 zener diode 5v - 500 mw sod80 sm1, sm2 90 smd hybrid coupler anaren xinger 1304-3 board metclad mx3-30-c1/10c thk 0.762 mm cu 35 m substrate teflon-glass er = 2.55 back side copper flange 2 mm thickness ceramic chip capacitors atc100b or equivalent
5/5 db-960-70w information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of stmicroelectronics. the st logo is registered trademark of stmicroelectronics ? 2001 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a . http://w ww.st.com
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